Compact high repetition rate mid-infrared solid-state lasers
Abstract
The work in this thesis focuses on the development of novel mid-infrared laser sources
which are compact, robust and suitable for the generation of ultrafast pulses with GHz
pulse repetition frequencies. The motivation behind the work is to overcome the
challenges associated with many of the mid-infrared ultrafast sources used at present.
The novel laser gain medium Erbium doped Gallium Lanthanum Sulphide glass has
been explored for use as a compact mid-infrared emission source. Ultrafast Laser
Inscription was utilised to inscribe waveguides and under pumping conditions the
waveguides emitted fluorescence at ~ 2.73 µm. The fluorescence intensity increased
with increasing dopant concentration. The propagation loss of these waveguides was measured to be ~ 1.83 dBcm-1 and an IR waveguide amplifier was demonstrated exhibiting a maximum gain of 5.4 dBcm-1 at 1538 nm. These results indicate ways in
which the cavity should be optimised for mid-infrared lasing operation.
High repetition rate pulse generation from a Holmium doped YAG waveguide laser has
been investigated using a graphene based saturable absorber. Depressed cladding
waveguides were fabricated with Ultrafast Laser Inscription; these were subsequently
employed in a compact quasi-monolithic laser resonator. Initially the laser operated in
the CW regime resulting in a maximum laser output power of 1.78 W with a slope
efficiency of 16% at 2.09 µm. In pulsed operation the laser generated pulses in a Q
switched modelocked regime with an average output power of 170 mW and slope
efficiency of 6.8%. The modelocked pulses were emitted with a high pulse repetition
rate of 5.9 GHz.
A room temperature Kerr-lens modelocked Chromium doped Zinc Selenide laser
emitting sub-40-fs mid-infrared pulses is presented. The active crystal in this laser has
been treated by hot isostatic pressing. Ultrafast pulses were generated with a pulse
duration of 37 fs centred at 2388 nm. The laser emitted stable modelocked pulses at a
repetition rate of 182 MHz with a maximum average output power of 144 mW. This is
the shortest pulse width demonstrated to date from polycrystalline Cr:ZnSe indicating
that hot isostatic pressing is beneficial for the generation of mid-infrared ultrafast pulses in Transition metal doped II – VI semiconductors.