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dc.contributor.advisorReid, Professor Derryck
dc.contributor.authorSerrels, Keith Andrew
dc.date.accessioned2009-11-10T12:03:40Z
dc.date.available2009-11-10T12:03:40Z
dc.date.issued2009-05
dc.identifier.urihttp://hdl.handle.net/10399/2208
dc.description.abstractThis thesis concerns the development of novel resolution-enhancing optical techniques for the purposes of non-destructive sub-surface semiconductor integrated-circuit (IC) inspection. This was achieved by utilising solid immersion lens (SIL) technology, polarisation-dependent imaging, pupil-function engineering and optical coherence tomography (OCT). A SIL-enhanced two-photon optical beam induced current (TOBIC) microscope was constructed for the acquisition of ultra-high-resolution two- and three-dimensional images of a silicon flip-chip using a 1.55μm modelocked Er:fibre laser. This technology provided diffraction-limited lateral and axial resolutions of 166nm and 100nm, respectively - an order of magnitude improvement over previous TOBIC imaging work. The ultra-high numerical aperture (NA) provided by SIL-imaging in silicon (NA=3.5) was used to show, for the first time, the presence of polarisation-dependent vectorialfield effects in an image. These effects were modelled using vector diffraction theory to confirm the increasing ellipticity of the focal-plane energy density distribution as the NA of the system approaches unity. An unprecedented resolution performance ranging from 240nm to ~100nm was obtained, depending of the state of polarisation used. The resolution-enhancing effects of pupil-function engineering were investigated and implemented into a nonlinear polarisation-dependent SIL-enhanced laser microscope to demonstrate a minimum resolution performance of 70nm in a silicon flip-chip. The performance of the annular apertures used in this work was modelled using vectorial diffraction theory to interpret the experimentally-obtained images. The development of an ultra-high-resolution high-dynamic-range OCT system is reported which utilised a broadband supercontinuum source and a balanced-detection scheme in a time-domain Michelson interferometer to achieve an axial resolution of 2.5μm (in air). The examination of silicon ICs demonstrated both a unique substrate profiling and novel inspection technology for circuit navigation and characterisation. In addition, the application of OCT to the investigation of artwork samples and contemporary banknotes is demonstrated for the purposes of art conservation and counterfeit prevention.en_US
dc.language.isoenen_US
dc.publisherHeriot-Watt Universityen_US
dc.rightsAll items in ROS are protected by the Creative Commons copyright license (http://creativecommons.org/licenses/by-nc-nd/2.5/scotland/), with some rights reserved.
dc.titleUltra-high-resolution optical imaging for silicon integrated-circuit inspectionen_US
dc.typeThesisen_US


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